isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm

N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

N-Channel PowerTrench MOSFET

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