N-ChannelPowerTrenchMOSFET60V,80A,3.8m?

Features •rDS(ON)=3.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=95nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement •InjectionSystems •DC

N-ChannelPowerTrench짰MOSFET60V,80A,3.8m?

文件：258.399 Kbytes Page：10 Pages

N-ChannelPowerTrenchMOSFET60V,80A,3.8m?

Features •rDS(ON)=3.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=95nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement •InjectionSystems •DC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=17A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.8mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

N-ChannelPowerTrench짰MOSFET60V,80A,3.8m?

文件：258.399 Kbytes Page：10 Pages