单 P 沟道 PowerTrench® MOSFET -20V，-7.8A，30mΩ

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 它具有带低通态电阻的MOSFET。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •VGS = -4.5V，ID = -7.8A时，最大rDS(on) = 30 mΩ\n•VGS = -2.5V，ID = -6.6A时，最大rDS(on) = 37 mΩ\n•VGS = -1.8V，ID = -5.5A时，最大rDS(on) = 50mΩ\n•VGS = -1.5V，ID = -2.0A时，最大rDS(on) = 90 mΩ\n•薄型 - 最大0.8 mm - 采用新的MicroFET 2X2 mm封装\n•HBM ESD保护等级> 3kV典型值（注3）\n•不含有卤化合物和氧化锑\n•符合RoHS标准;

Single P-Channel PowerTrench짰 MOSFET -20V, -7.8A, 30m廓

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Silicon planar type

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