P 沟道，PowerTrench® MOSFET，-20V，-7.8A，24mΩ

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 它具有带低通态电阻的MOSFET。MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •VGS = -5 V，ID = -7.8 A时，最大rDS(on) = 24mΩ\n•VGS = -4.5 V，ID = -7 A时，最大rDS(on) = 25mΩ\n•VGS = -2.5 V，ID = -5.5 A时，最大rDS(on) = 35mΩ\n•VGS = -1.8 V，ID = -4 A时，最大rDS(on) = 45mΩ\n•薄型 – 最大0.8mm – 采用MicroFET2x2 mm封装\n•HBM ESD保护等级>3.2KV，典型值（注3）\n•不含有卤化合物和氧化锑\n•符合RoHS标准;

Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 mOhm

文件：308.25 Kbytes Page：7 Pages

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 3560 A Surge current 30 kA

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

Silicon Rectifier Diode

Description: The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency