双 P 沟道，Power Trench® MOSFET，-30V，-3.3A，87mΩ

该器件是专门设计用作有双开关要求的单一封装解决方案，例如更大型Mosfet的栅极驱动器。 该器件具有两个带低通态电阻的独立P沟道MOSFET，以最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 旨在为增强ESD电压电平而增加了G-S齐纳管。 • Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A\n• Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A\n• HBM ESD protection level > 2 KV typical (Note 3)\n• Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm\n• RoHS Compliant;

Dual P-Channel PowerTrench짰 MOSFET -30 V, -3.3 A, 87 m廓

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Infrared Emitting Diode High Speed for Remote Control

Description: The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: • Low Forward Voltage • High Radiant Power and Radiant Intensity • Suitable for DC and High Pulse Current Operation • High