双 N 沟道 PowerTrench® MOSFET 30V，2.9A，123mΩ

该器件是专为满足蜂窝手机和其他超便携应用中的双开关要求而设计的单封装解决方案。 该器件具有两个带低通态电阻的独立N沟道MOSFET，可最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •2.9 A，30 V\n•RDS(ON) = 123 mΩ @ VGS = 4.5 V\n•RDS(ON) = 140 mΩ @ VGS = 3.0 V\n•RDS(ON) = 163 mΩ @ VGS = 2.5 V\n•薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装\n•HBM ESD保护等级 = 1.8kV（注3）\n•符合RoHS标准\n•无任何卤代化合物和锑氧化物;

Dual N-Channel PowerTrench MOSFET

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Dual N-Channel PowerTrench짰 MOSFET

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Dual N-Channel PowerTrench짰 MOSFET

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256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems

The MPC2002SG and MPC2003SG are designed to provide a burstable, high performance,256K/512K L2 cache for the PowerPC 60x processors. The modules are configured as 32K x 72 and 64K x72 bits in a 136 pin dual read out single inline memory module (DIMM). The module uses four of Motorola’s MCM67M518 o

900 MHz TX-MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2002 is a double-balanced, active mixer designed for transmitters operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFI

8 Watt Audio Power Amplifier

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8 Watt Audio Power Amplifier

文件：131.86 Kbytes Page：4 Pages

8 Watt Audio Power Amplifier

文件：131.86 Kbytes Page：4 Pages