Max rDS(on) = 90 m廓 at VGS = -4.5 V, ID = -2.9 A

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封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR） 描述：FET/BJT NPN/P CH 30V 2.9A MICROF 分立半导体产品 晶体管 - 特殊用途

集成式 P 沟道，Power Trench® MOSFET 和 BJT，-30V，-2.9A，90mΩ

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1430 variable capacitance diode was specially made to be used as tuning elements in car radios, radio cassettes, stereos, and other consumer radios. The KV1430 is suitable for wide band tuning from 76 to 108 MHz. If the KV1430 is used only for FM reception, it is possible to op

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1430 variable capacitance diode was specially made to be used as tuning elements in car radios, radio cassettes, stereos, and other consumer radios. The KV1430 is suitable for wide band tuning from 76 to 108 MHz. If the KV1430 is used only for FM reception, it is possible to op

20 - 40 GHz X3 Frequency Multiplier

Key Features and Performance • 0.25um pHEMT Technology • 20 - 40 GHz Output Frequencies • 8.5 - 13.5 GHz Fundamental Frequencies • -15 +/- 2dB Conversion Gain • 18 dBm Input Drive Optimum • 15dB Fundamental Isolation • 30dB 2nd Harmonic Isolation Primary Applications • Point-to-Point Radi

20 - 40 GHz IQ Mixer

Key Features and Performance • 0.25um pHEMT Technology • 20 - 40 GHz RF/LO Frequencies • DC - 1GHz IF • -11 +/- 1dB Conversion Gain • 15 dBm Input Drive Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Image Reject Mixers