集成式 P 沟道，Power Trench® MOSFET 和 BJT，-30V，-2.9A，90mΩ

该器件特别设计为一个单封装解决方案，适用于手机和其他超便携应用的负载开关。 在其节省空间的 MicroFET2x2 封装内具有 50 V NPN BJT 和 30 V P 沟道 MOSFET 产品，从而提供出色热性能，因其物理尺寸非常适合于线性模式应用。 最大值 rDS(on) = 90 mΩ（VGS = -4.5 V且ID = -2.9 A）\n 最大值 rDS(on) = 130 mΩ（VGS = -2.5 V且ID = -2.6 A）\n 最大值 rDS(on) = 170 mΩ（VGS = -1.8 V，ID = -1.7 A）\n 最大值 rDS(on) = 240 mΩ（VGS = -1.5 V，ID = -1 A）\n 薄型 – 最大 0.8 mm – 采用新的 MicroFET 2x2 mm 封装\n HBM 静电放电保护等级>2 kV 典型值（注3）\n 符合RoHS标准;

封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR） 描述：FET/BJT NPN/P CH 30V 2.9A MICROF 分立半导体产品 晶体管 - 特殊用途

Max rDS(on) = 90 m廓 at VGS = -4.5 V, ID = -2.9 A

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DESCRIPTION The KV1430 variable capacitance diode was specially made to be used as tuning elements in car radios, radio cassettes, stereos, and other consumer radios. The KV1430 is suitable for wide band tuning from 76 to 108 MHz. If the KV1430 is used only for FM reception, it is possible to op

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