Dual P-Channel PowerTrench MOSFET

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

-20V双P沟道PowerTrench® MOSFET

该器件专门设计为单封装解决方案，适合手机和其他超便携应用的电池充电开关。 该器件具有两个带低导通电阻的独立P沟道MOSFET，以最大限度地降低导通损耗。 当连接为典型共源配置时，可以实现双向电流流动。MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •-3.0 A, -20V.\n•RDS(ON) = 120 mΩ（VGS = -4.5 V 时）\n• RDS(ON) = 160 mΩ（VGS = -2.5 V 时）\n• RDS(ON) = 240 mΩ（VGS = -1.8 V时）\n• • 薄型 – 最大 0.8 mm – 采用新的 MicroFET 2x2 mm 封装\n•符合 RoHS 标准\n•不含任何卤代化合物和锑氧化物;

Dual P-Channel PowerTrench짰 MOSFET

文件：863.56 Kbytes Page：7 Pages

Dual P-Channel PowerTrench MOSFET

文件：845.86 Kbytes Page：7 Pages

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3 A, 120 m廓

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

Dual P-Channel PowerTrench MOSFET

文件：845.86 Kbytes Page：7 Pages

Dual P-Channel PowerTrench짰 MOSFET

文件：863.56 Kbytes Page：7 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Integrated Circuit Module - Hybrid, Audio Power Amplifier

Integrated Circuit Module – Hybrid, Audio Power Amplifier

STEPPER MOTOR DRIVE CIRCUIT

STEPPER MOTOR DRIVE CIRCUIT

Analog current buffer for CD-R and CD-RW systems

文件：87.27 Kbytes Page：16 Pages

Analog current buffer for CD-R and CD-RW systems

文件：87.27 Kbytes Page：16 Pages