Q-Class Power MOSFETs

Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM Features • Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness • HiPerDynTM FRED - consistin

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features • 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductors advanced PowerTrench® process to optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame with all the drains on one side of the package. Features ■ Max rDS(on) = 23mΩ at VGS = 4.5V, ID = 10A ■ M

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

P-Channel 1.8V Logic Level Power Trench MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable

Single N-Channel, Logic-Level, PowerTrench MOSFET

General Description This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swit

20 V, 6 A Synchronous Step-Down

GENERAL DESCRIPTION The ADP2381 is a current mode control, synchronous, step down, dc-to-dc regulator. It integrates a 44 mΩ power MOSFET and a low-side driver to provide a high efficiency solution. The ADP2381 runs from an input voltage of 4.5 V to 20 V and can deliver 6 A of output current. T

Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 mΩ at VGS = 2.5 V,

Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected

Dual P-Channel PowerTrench MOSFET

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3 A, 120 m廓

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected i

20V Complementary PowerTrench MOSFET

General Description This device is designed specifically as a single package solution for a DC/DC Switching MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The

Dual N-Channel PowerTrench짰 MOSFET 30 V, 3.8 A, 68 m廓

General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2

MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. Features ■ RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A ■ RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A ■ Low

Dual P-Channel PowerTrench짰 MOSFET -20 V, -3.6 A, 60 m廓

General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in

New Products, Tips and Tools for Power and Mobile Applications

Description The FAN6756 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling compliance with worldwide Standby Mode efficiency guidelines. Features ■ Single-Ended Topologies, such as Flybac

P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm

General Description FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When opti

P-Channel Power Trench짰 MOSFET -30V, -18A, 20.0m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

P-Channel Enhancement Mode MOSFET

Application ●Load/Power Switching ●Interfacing Switching ●Logic Level Shift

Dual N-Channel PowerTrench MOSFET

General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switch

Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ

Features Q1: N-Channel Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A RoHS Compliant Applications Mobile Computing Mobile Internet Devices

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Power Trench짰 SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

N-Channel Power MOSFET

Features • Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion General Description This N

N-Channel Power MOSFET

Features • Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion General Description This N

Enhancement Mode Field Effect Transistor N-Channel

Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application

MOSFET – P-Channel, POWERTRENCH

General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 307 m at VGS = −10 V, ID =

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

Dual N-Channel PowerTrench MOSFET

General Description This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power den

Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m

General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Features ■ Ma

Complementary PowerTrench짰 MOSFET N-channel: 20 V, 3.8 A, 66 m廓 P-channel: -20 V, -2.6 A, 142 m廓

General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. T

Smart Power Stage (SPS) Modules with Integrated Current and Temperature Monitors

The FDMF5062 is ON Semiconductor’s next generation Smart Power Stage (SPS) solution with fully optimized, ultra-compact, integrated MOSFETs with advanced driver IC current and temperature sensors, for high-current, high frequency, and synchronous buck DC-DC converters. With an integrated approa

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6823A integrates a driver IC, two power MOSFETs, and a bootstrap Schott

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6823A integrates a driver IC, two power MOSFETs, and a bootstrap Schott

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6823B integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6823B integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6823C integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6823C integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6824A integrates a driver IC, two power MOSFETs, and a bootstrap Schot

FDMF6824A ??Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6824A integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is ON Semiconductor’s next generation, fully optimized, ultra-compact, integrated MOSFET plus driver pow er stage solution for high current, high-frequency, synchronous buc k DC-DC applications. The FDMF6824B integrates a driver IC, tw o pow er MOSFETs, and a boot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6824B integrates a driver IC, two power MOSFETs, and a bootstrap Schot

FDMF6824C ??Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6824C integrates a driver IC, two power MOSFETs, and a bootstrap Schott

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6824C integrates a driver IC, two power MOSFETs, and a bootstrap Schot

Extra-Small, High-Performance, High-Frequency DrMOS Module

Description The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6833C integrates a driver IC, two power MOSFETs, and a bootstrap Schot

High Current / High Frequency FET plus Driver Multi-chip Module

General Description The FDMF8704 is a fully optimized integrated Driver plus MOSFET power stage solution for high current synchronous buck DC-DC applications. The device integrates a driver IC and two Power MOSFETs into a space saving, MLP 8x8, 56-pin package. Features ■ 7V to 20V Input Voltage

High Efficiency / High Frequency FET plus Driver Multi-chip Module with Internal Voltage Regulator

General Description The FDMF8704V is a fully optimized integrated Driver plus MOSFET power stage solution for high current synchronous buck DC-DC applications. The device integrates a driver IC and two Power MOSFETs into a space saving, MLP 8x8, 56-pin package. Features ■ 7V to 20V Input Voltag

N-Channel Dual CoolTM Power Trench짰 SyncFETTM 30 V, 49 A, 1.9 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 SyncFETTM 30 V, 49 A, 2.6 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual

General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to pro