SILICON EPITAXIAL PLANAR DIODES

文件：292.518 Kbytes Page：1 Pages

General Purpose Diodes

文件：336.14 Kbytes Page：10 Pages

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Gr

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Gr

6500V/關s, Wideband, High-Output-Current, Single- Ended-to-Differential Line Drivers with Enable

General Description The MAX4447/MAX4448/MAX4449 single-ended-to differential line drivers are designed for high-speed communications. Using current feedback for greater bandwidth, these devices deliver full-power bandwidths up to 405MHz and feature slew rates as high as 6500V/µs. The MAX4447 ha

HERMETIC HALF-BRIDGE MOSFET/IGBT GATE Driver

HERMETIC HALF-BRIDGE MOSFET/IGBT GATE Driver