N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

MOSFET N-CH 100V 80A TO-262AB

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