N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

文件：258.399 Kbytes Page：10 Pages

N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC

N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

文件：258.399 Kbytes Page：10 Pages