500V N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel MOSFET

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

N-Channel MOSFET

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

50A,500V N-Channel Type Planar Process Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-247

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，45 A，120 mΩ，TO-247

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET FRFET® MOSFET 体二极管的反向恢复性能通过寿命控制方式得到加强。 其 trr 小于 100nsec 且反向 dv/dt 抗扰度为 15V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 体二极管性能具有重要作用的某些应用中可消除多余的元件，并提高系统的可靠性。 该器件系列适用于开关电源转换器应用，如功 •RDS(on) = 120mΩ （最大值）@ VGS = 10V, ID = 22.5A\n•低栅极电荷（典型值 105nC） \n•低 Crss（典型值 62pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力;

50A,500V N-Channel Type Planar Process Power MOSFET

500V N-Channel MOSFET, FRFET

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

500V N-Channel MOSFET, FRFET

文件：1.08493 Mbytes Page：7 Pages

500V N-Channel MOSFET, FRFET

文件：1.26168 Mbytes Page：7 Pages

500V N-Channel MOSFET, FRFET

文件：1.26168 Mbytes Page：7 Pages

45A 500V N-channel enhanced field effect transistor

文件：889.59 Kbytes Page：5 Pages