20V N & P-Channel PowerTrench MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

20V N&P沟道Power Trench® MOSFET

这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件经过专门设计，能以极小的尺寸提供极低的功耗，非常适合那些不宜采用更大更昂贵的TSSOP-8和SSOP-6封装的应用。 •Q1 0.7A, 20V. RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V\n•Q2 -0.6A, -20V. RDS(ON) = 420mΩ @ VGS = -4.5V RDS(ON) = 630mΩ @ VGS = -2.5V\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•SC70-60封装 小尺寸（比标准SSOT-6小51%）；薄型（1mm厚）。;

20V N & P-Channel PowerTrench MOSFETs

20V N 和 P 沟道 PowerTrench® MOSFET

这些双N和P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件经过专门设计，能以极小的尺寸提供极低的功耗，非常适合那些不宜采用更大更昂贵的TSSOP-8和SSOP-6封装的应用。 •Q1 0.7 A、20 V。RDS(ON) = 300 mΩ (VGS = 4.5 V) RDS(ON) = 400 mΩ (VGS = 2.5 V)\n•Q2 -0.6A, -20V。RDS(ON) = 420 mΩ (VGS = -4.5 V) RDS(ON) = 630 mΩ (VGS = -2.5 V)\n•低栅极电荷\n•高性能沟道技术可实现极低的 RDS(ON)\n•SC70-60封装小尺寸（比标准SSOT-6小51%）；薄型（1mm厚）。\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

20V N & P-Channel PowerTrench짰MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power

6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER

DESCRIPTION L6327/L6332 is a BICMOS monolithic integrated circuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/inductive write heads. It is available as either a six (L6327) or four (L6332) channel device. The devices consist of a voltage-sense, cur

3-Pin, Ultra-Low-Voltage, Low-Power 關P Reset Circuits

General Description The MAX6332/MAX6333/MAX6334 microprocessor (µP) supervisory circuits monitor the power supplies in 1.8V to 3.3V µP and digital systems. They increase circuit reliability and reduce cost by eliminating external components and adjustments. Features ♦ Ultra-Low 0.7V Operating S

16-Bit Stereo Audio DAC & Headphone Driver Mute and Power Down Function Component Less, Low Cost

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