20V N & P-Channel PowerTrench MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

20V N & P-Channel PowerTrench MOSFETs

20V N&P沟道Power Trench® MOSFET

20V N & P-Channel PowerTrench짰MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

20V N 和 P 沟道 PowerTrench® MOSFET

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power

6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER

DESCRIPTION L6327/L6332 is a BICMOS monolithic integrated circuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/inductive write heads. It is available as either a six (L6327) or four (L6332) channel device. The devices consist of a voltage-sense, cur

3-Pin, Ultra-Low-Voltage, Low-Power 關P Reset Circuits

General Description The MAX6332/MAX6333/MAX6334 microprocessor (µP) supervisory circuits monitor the power supplies in 1.8V to 3.3V µP and digital systems. They increase circuit reliability and reduce cost by eliminating external components and adjustments. Features ♦ Ultra-Low 0.7V Operating S

16-Bit Stereo Audio DAC & Headphone Driver Mute and Power Down Function Component Less, Low Cost

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