Dual N & P Channel Digital FET

General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

双 N 和 P 沟道数字 FET 25V

双N&P沟道逻辑电平增强模式场效应晶体管采用了飞兆半导体专有的高单元密度、DMOS技术。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 该器件特别为低电压应用设计，以替代双极数字晶体管和小信号MOSFETS。 由于不需要偏压电阻，该双通道数字FET可取代数个具有不同偏压电阻值的数字晶体管。 • N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 W @ VGS= 4.5 V,\n• P-Ch -0.41 A,-25V, RDS(ON) = 1.1 W @ VGS= -4.5V,\n• 非常小的封装尺寸 SC70-6。\n• 极低的栅极驱动要求允许 3V 电路的直接运行 (V GS(th) < 1.5 V)\n• 栅-源齐纳二极管可增强耐静电放电能力（>6kV人体模型）。;

Dual N & P Channel Digital FET

文件：674.29 Kbytes Page：9 Pages

Dual N & P Channel Digital FET

Dual N & P Channel Digital FET

文件：674.29 Kbytes Page：9 Pages

Triggered Vacuum Gaps

The Triggered Vacuum Spark Gaps are ideal high-voltage switches for applications where a wide operating voltage range is desired. The low end of the operating voltage range is independent of the Static Breakdown Voltage (SBV). Operating ranges from 300 volts to 80 kilovolts are possible. Switching

Dual N & P Channel , Digital FET

文件：96.76 Kbytes Page：7 Pages

Sound fader control circuit

文件：230.84 Kbytes Page：36 Pages

Sound fader control circuit

文件：230.84 Kbytes Page：36 Pages