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FDG6301N_F085价格
参考价格：￥0.4220
型号：FDG6301N_F085 品牌：Fairchild 备注：这里有FDG6301N_F085多少钱，2026年最近7天走势，今日出价，今日竞价，FDG6301N_F085批发/采购报价，FDG6301N_F085行情走势销售排行榜，FDG6301N_F085报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDG6301N_F085 | Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi | Fairchild 仙童半导体 |   | |
FDG6301N_F085 | 双 N 沟道，数字 FET，25V，0.22A，4Ω | ONSEMI 安森美半导体 | | |
Dual N-Channel, Digital FET Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu | ONSEMI 安森美半导体 | |
FDG6301N_F085产品属性
- 类型
描述
- 型号
FDG6301N_F085
- 功能描述
MOSFET Dual N-Chan Digital MOSFET; Automotive
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
6327 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
onsemi(安森美) |
25+ |
SC-70-6 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
VB |
25+ |
SC70 |
18985 |
原装正品,假一罚十! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
on |
23+ |
na |
20000 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
2223+ |
SC70-6 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON/安森美 |
21+ |
SC-70-6 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
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DdatasheetPDF页码索引
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