Digital FET, N-Channel

General Description This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage

GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

General Description The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi ers that operate from a single Vcc supply. The surface mount SOT26 amplifi er can be used as a broadband gain stage or used with external matching for optimized narrow band application

3AG Slo-Blo Fuse 313/315 Series

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3M ??Scotch짰 Box Sealing Tape 313

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Wiha Insulated 1/4 Sockets & Sets

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Low Power Indicator

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