Integrated N-Channel PowerTrench MOSFET and Schottky Diode

General Description FDFM2N111 combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It

20V集成式P沟道PowerTrench® MOSFET和肖特基二极管

FDFM2N111将飞兆半导体的 PowerTrench MOSFET 技术所带来的卓越性能与正向压降非常低的肖特基势垒整流器融合在 MicroFET 封装中。该器件专门设计为标准降压转换器的单封装解决方案。 它具有带极低通态电阻的快速开关、低栅极电荷 MOSFET。 •4 A，20 V\n•RDS(ON) = 100 mΩ @ VGS = 4.5 V\n•RDS(ON) = 150 mΩ @ VGS = 2.5 V\n•小型 - 0.8 毫米最大值 - 采用新封装 MicroFET 3×3 毫米;

Integrated N-Channel PowerTrench MOSFET and Schottky Diode

General Description FDFM2N111 combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It