isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=58A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

30V N -Channel MOSFET

Features High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability VDS =30V RDS(ON) (at VGS =10V)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

N 沟道，PowerTrench® MOSFET，30V，58A，9mΩ

N-Channel 30-V (D-S) MOSFET

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N-Channel PowerTrench MOSFET

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N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

文件：503.61 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

文件：503.61 Kbytes Page：11 Pages

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

SpaceMaker™, 12 C #20 Str TC, PO Ins, OS, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 12 Conductor 20AWG (26x34) Tinned Copper, PO Insulation, Overall Beldfoil® Shield, PVC Outer Jacket, AWM 2937

Heyco® Self-Closing Braided Sleeving

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TUBEAXIAL

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AC axial compact fan

文件：290.65 Kbytes Page：4 Pages