丝印代码：FDD8870；30V N-Channel MOSFET

Features High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability VDS =30V RDS(ON) (at VGS =10V)

丝印代码：FDD8870；N-Channel PowerTrench짰 MOSFET

文件：511.05 Kbytes Page：11 Pages

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N 沟道，PowerTrench® MOSFET，30V，160A，3.9mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •RDS(ON) = 3.9 mΩ, VGS = 10V, ID = 35V\n•RDS(ON) = 4.4 mΩ, VGS = 4.5V, ID = 35V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷\n•高功率和高电流处理能力;

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：310.03 Kbytes Page：2 Pages

N-Channel PowerTrench MOSFET

文件：129.12 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：491.42 Kbytes Page：11 Pages

30 V、160 A、3.2 mΩ、Dual DPAKN 沟道 PowerTrench®

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低 rDS(on) 和高速开关进行了优化。 rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A\n rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A\n 高性能沟道技术可实现极低的 rDS(ON)\n 低栅极电荷\n 高功率和高电流处理能力\n 符合 AEC Q101 标准\n 符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET

文件：491.42 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓

文件：319.21 Kbytes Page：11 Pages

CMOS Integrated DTMF Receiver

Product Description The CAMD CM8870/70C provides full DTMF receiver capability by integrating both the bandsplit filter and digital decoder functions into a single 18-pin DIP, SOIC, or 20-pin PLCC package. The CM8870/70C is manufactured using state-of-the-art CMOS process technology for low pow

CMOS Integrated DTMF Receiver

Product Description The CAMD CM8870/70C provides full DTMF receiver capability by integrating both the bandsplit filter and digital decoder functions into a single 18-pin DIP, SOIC, or 20-pin PLCC package. The CM8870/70C is manufactured using state-of-the-art CMOS process technology for low pow

CMOS Integrated DTMF Receiver

Product Description The CAMD CM8870/70C provides full DTMF receiver capability by integrating both the bandsplit filter and digital decoder functions into a single 18-pin DIP, SOIC, or 20-pin PLCC package. The CM8870/70C is manufactured using state-of-the-art CMOS process technology for low pow

CMOS Integrated DTMF Receiver

Product Description The CAMD CM8870/70C provides full DTMF receiver capability by integrating both the bandsplit filter and digital decoder functions into a single 18-pin DIP, SOIC, or 20-pin PLCC package. The CM8870/70C is manufactured using state-of-the-art CMOS process technology for low pow

DTMF Receiver

Description The M-8870 is a full DTMF Receiver that integrates both bandsplit filter and decoder functions into a single 18-pin DIP or SOIC package. Manufactured using CMOS process technology, the M-8870 offers low power consumption (35 mW max) and precise data handling. Features • Low Power Co