30V N-Channel MOSFET

Features High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability VDS =30V RDS(ON) (at VGS =10V)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N 沟道，PowerTrench® MOSFET，30V，160A，3.9mΩ

N-Channel PowerTrench MOSFET

文件：129.12 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：491.42 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

文件：310.03 Kbytes Page：2 Pages

N-Channel PowerTrench짰 MOSFET

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30 V、160 A、3.2 mΩ、Dual DPAKN 沟道 PowerTrench®

N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓

文件：319.21 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：511.05 Kbytes Page：11 Pages

SpaceMaker™, 5 C #18 Str TC, PO Ins, OS, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 5 Conductor 18AWG (41x34) Tinned Copper, PO Insulation, Overall Beldfoil® Shield, PVC Outer Jacket, AWM 2937

Advanced PMU for Microcontrollers and Solid State Drive Applications

BENEFITS and FEATURES • Wide input voltage range • Vin = 2.8V to 5.5V • Complete integrated power solution • One 4A DC/DC Step-Down (Buck) Regulator • Three 2.5A DC/DC Step-Down (Buck) Regulators • One 800mA LDO • Two 200mA LDOs • Space Savings • Fully integrated • High Fsw =2.25MHz or 1

MSD DIS Coil Interface Module

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CABLE CLAMPS AND TIES

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Advanced PMU for Microcontrollers and Solid State Drive Applications

文件：3.90168 Mbytes Page：38 Pages