isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=30A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

MOSFET N-CH 25V 16.4A DPAK

N-Channel PowerTrench짰 MOSFET 25 V, 8.6 m廓

文件：336.95 Kbytes Page：7 Pages

BNC(m)/F(f), BNC(f)/F(f), BNC(f)/F(m), BNC(m)/F(m)

Features • True 75 Ω BNC adapters. • Easily adapt F-Connectors to BNC. • Gold-plated (15 micro–inches) contacts. • BNC insulation material is PTFE (not delrin). Materials • Body is made of machined brass with tarnish resistant nickel-plating. • Female BNC center contact: Gol

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter

FEATURES ► Wideband RF output frequency range: 5.9 GHz to 23.6 GHz ► Two upconversion modes ► Direct conversion from baseband I/Q to RF ► Single sideband upconversion from real IF ► LO input frequency range: 5.4 GHz to 14 GHz ► LO doubler (x2 LO) for up to 28 GHz ► Matched 100 Ω balanced RF

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter

FEATURES ► Wideband RF output frequency range: 5.9 GHz to 23.6 GHz ► Two upconversion modes ► Direct conversion from baseband I/Q to RF ► Single sideband upconversion from real IF ► LO input frequency range: 5.4 GHz to 14 GHz ► LO doubler (x2 LO) for up to 28 GHz ► Matched 100 Ω balanced RF

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter

文件：871.57 Kbytes Page：35 Pages

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter

文件：871.57 Kbytes Page：35 Pages