N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching freque

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =90mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ

N-Channel Logic Level UltraFET짰 Trench Power MOSFET 30V, 9A, 70m?

文件：267.08 Kbytes Page：11 Pages

N-Channel Logic Level UltraFET짰 Trench Power MOSFET 30V, 9A, 70m?

文件：267.08 Kbytes Page：11 Pages

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