30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 75 A, 3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=75A@ TC=25℃ ·Drain Source Voltage : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N-Channel PowerTrench MOSFET

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON resistance. • Ultrahigh-speed swithcing. • 4V drive. • Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting.

80-DOT LCD DRIVER WITH KEY MATRIX

GENERAL DESCRIPTION The MSM6606 is an LCD driver for a 1/2 duty dynamic display. It can directly drive an LCD of up to 80 segments, and one LED. Keyboard input is now available by the internal 5 x 6 keyscan circuit, and the number of wires between the front panel and the CPU can be minimized. FE

InSb photoconductive detector

Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 µm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

PIN DIODE

DESCRIPTION These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6200 is useful

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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