30V N-Channel Fast Switching PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 50A, 30

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

快速开关，N 沟道，PowerTrench® MOSFET，30V，50A，8.8mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •50A，30 V\n•RDS(ON) = 8.8 mΩ @ VGS = 1V\n•RDS(ON) = 11.3 mΩ @ VGS = 4.5V\n•低栅极电荷 \n•快速开关\n•高性能沟道技术可实现极低的RDS(ON);

Transient suppressor CELLULAR DIE PACKAGE

Transient suppressor CELLULAR DIE PACKAGE

30V N-Channel Fast Switching PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 50A, 30

FlexiHash For Battery Authentication

FlexiHash™ For Battery Authentication The ISL6296 is a highly cost-effective fixed-secret hash engine based on Intersil’s FlexiHash™ technology. The device authentication is achieved through a challenge-response scheme customized for low-cost applications, where cloning via eavesdropping without