N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

N-Channel PowerTrench® MOSFET 60V, 35A, 27mOhm

N-Channel PowerTrench짰 MOSFET 60V, 35A, 27mOhm

文件：266.77 Kbytes Page：7 Pages

N-Channel Logic Level Trench짰 MOSFET

文件：359.11 Kbytes Page：7 Pages

N-Channel Logic Level Trench MOSFET 60V, 36A, 27m

文件：454.75 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

文件：310.15 Kbytes Page：2 Pages

N-Channel Logic Level Trench짰 MOSFET

文件：359.11 Kbytes Page：7 Pages

N-Channel Logic Level Trench짰 MOSFET 60V, 36A, 27m||474244

文件：229.74 Kbytes Page：7 Pages

N-Channel Logic Level Trench MOSFET 60V, 36A, 27m

文件：454.75 Kbytes Page：7 Pages

N-Channel Logic Level Trench짰MOSFET

文件：350.26 Kbytes Page：8 Pages

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

Nine Channel PMU for Mobile Phones

GENERAL DESCRIPTION The patent-pending ACT5810 is a complete, integrated power management solution that is ideal for CDMA and GSM mobile phones. This device integrates a linear Li+ battery charger with an internal power MOSFET, six low dropout linear regulators (LDOs), a reset output, and two N-C

ADJUSTABLE 60V LINEAR LED DRIVER

Features - 2.0V to 60V Wide Input Voltage Range - An External Resistor for Setting Current - Low Reference Voltage (VRSET = 0.5V) - Adjustable Sink or Source LED Current Up to 200mA/200mA (W-DFN2020-3/TO-252) - ±3 LED Current Tolerance @Room Temp - Parallel Devices to Increase Regulated Cur

HIGH PERFORMANCE FLEXIBLE 1 VALVE

文件：544.65 Kbytes Page：2 Pages

60W IEEE802.3bt PD Module

文件：689.45 Kbytes Page：22 Pages