isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =12.3mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N-Channel MOSFET

Features RoHS Compliant VDSS = 60V ID(at VGS=10V)10.7A RDS(ON) (at VGS=10V)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

N 沟道，Power Trench® MOSFET，60V，50A，12.3mΩ

N-Channel Power Trench짰 MOSFET 60V, 50A, 12.3m廓

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N-Channel 60-V (D-S) MOSFET

Features ® Vos =60V,lo =50A | Roscn

One Cell Lithium-ion/Polymer Battery Protection IC

GENERAL DESCRIPTION The XB5353A product is a high integration solution for lithiumion/polymer battery protection. XB5353A contains advanced power MOSFET, high-accuracy voltage detection circuits and delay circuits. XB5353A is put into an ultra-small SOT23-5 package and only one external co

2300 MHz to 2900 MHz Balanced Mixer

GENERAL DESCRIPTION The ADL5363uses a highly linear, doubly balanced passive mixer core along with integrated RF and local oscillator (LO) balancing circuitry to allow for single-ended operation. FEATURES RF frequency range of 2300 MHz to 2900 MHz IF frequency range of dc to 450 MHz

20 (7/28) AWG Tinned Copper

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2200 MHz to 2700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun

文件：438.3 Kbytes Page：24 Pages

300 MHz to 1100 MHz Balanced Mixer, LO Buffer, and RF Balun

文件：486.21 Kbytes Page：23 Pages