-80V P 沟道 PowerTrench® MOSFET

此P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺已针对rDS(on)、开关性能和稳固性进行了优化。 •VGS = -10 V，ID = -2.1 A时，最大rDS(on) = 183mΩ\n•VGS = -4.5 V，ID = -1.9 A时，rDS(on) = 233 mΩ（最大值）\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装\n•快速开关速度\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

3V to 5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with 짹15kV ESD Protection

General Description The MAX3535E/MXL1535E isolated RS-485/RS-422 full duplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor or control logic side. These devices allow fast, 1000kbps communication across an isolation barrier when the common-mod

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

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Low power GSM/DCS/PCS multi-band transceiver

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