150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.4 A, 1

N-Channel Enhancement MOSFET

■ Features ● VDS (V) = 150V ● ID = 1.4A (VGS = 10V) ● RDS(ON)

丝印代码：252P；150V N-Channel Enhancement Mode MOSFET

Features BVDSS 150V ID@VGS 10V, TA=25°C 1.5A RDS(ON) typ. @VGS-10V, ID-1.5A 240m Ω

N 沟道，PowerTrench® MOSFET，150V，1.4A，425mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •1.4 A，150 V\n•RDS(on) = 425 mΩ@ VGS = 10 V\n•RDS(on) = 475 mΩ @ VGS = 6 V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷（典型值8nC）\n•高功率和高电流处理能力\n•快速开关速度;

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DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mod

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DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mod

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