isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=160A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N 沟道，PowerTrench® MOSFET，30V，160A，3.9mΩ

N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW

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N-Channel PowerTrench짰 MOSFET

文件：770.2 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：770.2 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓

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N-Channel PowerTrench짰 MOSFET

文件：223.41 Kbytes Page：11 Pages

30 V、160 A、3.9 mΩ、D2PAKN 沟道 PowerTrench®

SpaceMaker™, 5 C #18 Str TC, PO Ins, OS, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 5 Conductor 18AWG (41x34) Tinned Copper, PO Insulation, Overall Beldfoil® Shield, PVC Outer Jacket, AWM 2937

Advanced PMU for Microcontrollers and Solid State Drive Applications

BENEFITS and FEATURES • Wide input voltage range • Vin = 2.8V to 5.5V • Complete integrated power solution • One 4A DC/DC Step-Down (Buck) Regulator • Three 2.5A DC/DC Step-Down (Buck) Regulators • One 800mA LDO • Two 200mA LDOs • Space Savings • Fully integrated • High Fsw =2.25MHz or 1

MSD DIS Coil Interface Module

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CABLE CLAMPS AND TIES

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Advanced PMU for Microcontrollers and Solid State Drive Applications

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