P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features ● -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. ● Critical DC electrical parameters specified at elevated temperature. ● High density cell design for extremely low RDS(on).

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

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HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

DC Response, Silicon MEMS

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EPDM Snap-In Liquid Tight Bushings

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EPDM Snap-In Liquid Tight Bushings

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