isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N 沟道，PowerTrench® MOSFET，250V，50A，42.5mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 36.3mΩ （典型值）@ VGS = 10V, ID = 25A\n•高性能沟道技术可实现极低的 RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力;

250V N-Channel PowerTrench MOSFET

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5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages