150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster sw

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

150V N-Channel PowerTrench MOSFET

RF Matrix Amplifier

Description The CXA2570N is an IC developed for the RF signal processing of compact disc players. Features • Wide band RF signal processing • RF system VCA circuit • RF system equalizer (supports CAV mode) • Supports pickups with built-in RF summing amplifier • Low power con

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current Capacity

Low Power Pulse Width Modulator

文件：340.63 Kbytes Page：9 Pages

Low Power Pulse Width Modulator

文件：340.63 Kbytes Page：9 Pages