isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N 沟道，PowerTrench® MOSFET，75 V，58 A，16 mΩ

N-Channel PowerTrench® MOSFET, 75 V, 58 A, 16 mΩ, \nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 13 mΩ（典型值） @ VGS = 10 V, ID = 58 A\n•QG(tot) = 28 nC (Typ.) @ VGS = 10 V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）;

N-Channel PowerTrench MOSFET 75V, 58A, 16m?

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N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?

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N-Channel PowerTrench MOSFET 75V, 58A, 16m?

文件：267.52 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

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