15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

N-Channel SMPS Power MOSFET

Features ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ● Reduced rDS(ON) ● Reduced Miller Capacitance and Low Input Capacitance ● Improved Switching Speed with Low EMI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2PAK

15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

N-Channel SMPS Power MOSFET

Features ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ● Reduced rDS(ON) ● Reduced Miller Capacitance and Low Input Capacitance ● Improved Switching Speed with Low EMI

POWER FIELD EFFECT TRANSISTOR

TMOS POWER FETs 15 AMPERES rDS(on) = 0.4 OHM 450 and 500 VOLTS