DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 69A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N 沟道 UniFETTM MOSFET 250V，69A，41mΩ

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 41mΩ （最大值）@ VGS = 10V, ID = 34.5A\n•低栅极电荷（典型值 77nC） \n•低Crss（典型值 84pF）;

250V N-Channel MOSFET

文件：665.07 Kbytes Page：8 Pages

250V N-Channel MOSFET

文件：635.6 Kbytes Page：8 Pages