封装/外壳：模块 包装：托盘 描述：IGBT MOD 6500V 250A 4800W 分立半导体产品 晶体管 - IGBT - 模块

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 6500 V - IC nom = 250 A / ICRM = 500 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with enhanc

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 6500 V - IC nom = 250 A / ICRM = 500 A - Low VCE,sat • Mechanical features - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with CTI > 600 - Package with enhanced insulation of 10.4 kV AC 60 s -