PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR PARTMARKING DETAIL - P1 COMPLEMENTARY TYPE - FCX491

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • hFE Characterized up to 2A for High Current Gain Hold-Up • Complementary PNP Type: FCX591 • Totally Lead-Free & Fully RoHS Compliant (Notes

SOT89 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Resistance • hFE characterized up to 2A for high current gain hold up • Complementary NPN type: FCX491 • Totally Lead-Free & Fully RoHS comp

TRANSISTOR (PNP)

FEATURES Power dissipation

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

PNP Silicon Planar Medium Power High Perormance Transistor

FEATURES ● Complementary type:FCX491.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation

PNP Transistors

■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-60V

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

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PNP, 60V, 1A, SOT89

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PART MARKING DETAIL - P2 COMPLEMENTARY TYPE - FCX491A

Medium Power Transistor

Features ● PNP silicon planar.

40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features • V(BR)CEO > -40V • High current capability IC = -1A • Low saturation voltage VCE(sat)

40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • Maximum Continuous Current IC = -1A • Low Saturation Voltage VCE(SAT)

40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • Maximum Continuous Current IC = -1A • Low Saturation Voltage VCE(SAT)

40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features • V(BR)CEO > -40V • High current capability IC = -1A • Low saturation voltage VCE(sat)

60V PNP MEDIUM POWER TRANSISTOR IN SOT89

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PNP Transistors

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PNP, 40V, 1A, SOT89

40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

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PNP TRANSISTOR

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：PWR MID PERF TRANSISTOR SOT89 T\u0026 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

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3M™ Polishing Films

Product Description 3M™ Polishing Films 291X, 298X, 491X, 498X, 591X and 598X are comprised of micron graded mineral that has been coated onto a fibrous backing. Designed to break down into a slurry during use with water. Applications • MT fiber optic connector polishing and wafer edge cleani

1 ps MAX JITTER CRYSTAL OSCILLATOR (XO) (10 MHZ TO 810 MHZ)

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Solid Tantalum Chip Capacitors

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Solid Tantalum Chip Capacitors TANTAMOUNT® , Low Profile, Low ESR, Conformal Coated, Maximum CV

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Solid Tantalum Chip Capacitors TANTAMOUNT, Low Profile, Low ESR, Conformal Coated, Maximum CV

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