PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 53mΩ at 3A

PNP Silicon Power Switching Transistor

Features ● 2W power dissipation. ● 20A peak pulse current. ● Excellent HFE characteristics up to 20 Amps. ● Extremely low saturation voltage E.g. 25mv Typ. ● Extremely low equivalent on-resistance. RCE(sat) 53mΩ at 3A.

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO = -12V • IC = -3A Continuous Current • ICM= -20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

文件：92.24 Kbytes Page：3 Pages

PNP, 12V, 3A, SOT89

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

文件：92.24 Kbytes Page：3 Pages

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

文件：92.24 Kbytes Page：3 Pages

封装/外壳：TO-243AA 包装：管件 描述：TRANS PNP 12V 3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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