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FCPF380N60价格
参考价格：￥10.2599
型号：FCPF380N60 品牌：Fairchild 备注：这里有FCPF380N60多少钱，2025年最近7天走势，今日出价，今日竞价，FCPF380N60批发/采购报价，FCPF380N60行情走势销售排行榜，FCPF380N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FCPF380N60 | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 |   | |
FCPF380N60 | N-Channel SuperFET II MOSFET 文件：333.18 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | |
FCPF380N60 | isc N-Channel MOSFET Transistor 文件：315.24 Kbytes Page：2 Pages | ISC 无锡固电 | | |
FCPF380N60 | FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m廓 文件：653.11 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | |
FCPF380N60 | 600V N-Channel MOSFET 文件：289.59 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | |
FCPF380N60 | 功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，10.2 A，380 mΩ，TO-220F | ONSEMI 安森美半导体 | | |
600V N-Channel MOSFET Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D | ISC 无锡固电 | | ||
MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super | ONSEMI 安森美半导体 | | ||
FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m廓 文件：653.11 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | ||
Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F Ultra narrow lead | ONSEMI 安森美半导体 | | ||
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 10.2 A, 380 mΩ, TO-220F | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓 文件：205.55 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m廓 文件：602.58 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m廓 文件：602.58 Kbytes Page：9 Pages | Fairchild 仙童半导体 | |
FCPF380N60产品属性
- 类型
描述
- 型号
FCPF380N60
- 功能描述
MOSFET SuperFET2, 380mohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220F |
149 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
24+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
2450+ |
T0220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
20+ |
TO-220F3L |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
1932+ |
TO-220F |
387 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
2568 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
ONSEMI |
25+ |
NA |
8000 |
全新原装!优势库存热卖中! |
|||
FAIRCHILD |
25+23+ |
TO220F |
8790 |
绝对原装正品全新进口深圳现货 |
FCPF380N60芯片相关品牌
FCPF380N60规格书下载地址
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FCPF380N60数据表相关新闻
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2021-12-7FCP190N65F 全新原装现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-21FCN-360C048-B
FCN-360C048-B，全新原装当天发货或门市自取0755-82732291.
2019-12-26FCPF400N80Z原装现货厂商：FAIRCHILD/仙童2015+封装：TO-220F
FCPF400N80Z 277 FAIRCHILD/仙童 2015+ TO-220F
2019-9-11
DdatasheetPDF页码索引
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