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FCPF380N60价格
参考价格：￥10.2599
型号：FCPF380N60 品牌：Fairchild 备注：这里有FCPF380N60多少钱，2025年最近7天走势，今日出价，今日竞价，FCPF380N60批发/采购报价，FCPF380N60行情走势销售排行榜，FCPF380N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FCPF380N60 | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FCPF380N60 | N-Channel SuperFET II MOSFET 文件：333.18 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FCPF380N60 | isc N-Channel MOSFET Transistor 文件：315.24 Kbytes Page：2 Pages | ISC 无锡固电 | | |
FCPF380N60 | FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m廓 文件：653.11 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FCPF380N60 | 600V N-Channel MOSFET 文件：289.59 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
600V N-Channel MOSFET Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D | ISC 无锡固电 | | ||
MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
MOSFET – N-Channel, SUPERFET II 600 V, 10.2 A, 380 m Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super | ONSEMI 安森美半导体 | | ||
FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m廓 文件：653.11 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓 文件：205.55 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m廓 文件：602.58 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m廓 文件：602.58 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FCPF380N60产品属性
- 类型
描述
- 型号
FCPF380N60
- 功能描述
MOSFET SuperFET2, 380mohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
ONSEMI |
2020 |
NA |
8000 |
全新原装!优势库存热卖中! |
|||
ON |
24+ |
TO-220 FULLPACK, 3-LEAD (ULTRA |
25000 |
ON全系列可订货 |
|||
FSC进口原 |
25+ |
TO-220F |
80 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
23+ |
TO220 |
90000 |
一定原装房间现货 |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ON/安森美 |
21+ |
TO-220 |
8080 |
只做原装,质量保证 |
|||
FAIRCHI |
23+ |
TO220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ONSEMI |
两年内 |
N/A |
42000 |
原装现货,实单价格可谈 |
FCPF380N60规格书下载地址
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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FCN-360C048-B，全新原装当天发货或门市自取0755-82732291.
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2019-9-11
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