isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，250 mΩ，TO-220F

N-Channel SuperFET MOSFET

文件：884.99 Kbytes Page：10 Pages

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 m

Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides supe

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead