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位置：首页 > IC中文资料第3434页 > FCH47N60

FCH47N60价格

参考价格：￥60.2494

型号：FCH47N60_F085 品牌：Fairchild 备注：这里有FCH47N60多少钱，2025年最近7天走势，今日出价，今日竞价，FCH47N60批发/采购报价，FCH47N60行情走势销售排行榜，FCH47N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FCH47N60

600V N-Channel MOSFET

Description SuperFET™ is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provid

Fairchild

仙童半导体

FCH47N60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

FCH47N60

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47 A，70 mΩ，TO-247

ONSEMI

安森美半导体

FCH47N60

N-Channel SuperFET MOSFET

文件：353.13 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60

new generation of high voltage MOSFET

文件：422.35 Kbytes Page：10 Pages

Fairchild

仙童半导体

FCH47N60

600V N-Channel MOSFET

文件：969.75 Kbytes Page：10 Pages

Fairchild

仙童半导体

FCH47N60F

600V N-Channel MOSFET

Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, pr

Fairchild

仙童半导体

FCH47N60F

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

FCH47N60-F085

MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on−resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

ONSEMI

安森美半导体

FCH47N60-F133

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Fairchild

仙童半导体

FCH47N60F-F085

MOSFET – N-Channel

Features • Typical rDS(on) = 66 m at VGS = 10 V, ID = 47 A • Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A • UIS Capability • Qualified to AEC Q101 and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Automotive On Board Charger • Automotive DC/DC Converter

ONSEMI

安森美半导体

FCH47N60F-F133

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Fairchild

仙童半导体

FCH47N60N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

FCH47N60NF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

FCH47N60_06

new generation of high voltage MOSFET

文件：422.35 Kbytes Page：10 Pages

Fairchild

仙童半导体

FCH47N60_07

600V N-Channel MOSFET

文件：969.75 Kbytes Page：10 Pages

Fairchild

仙童半导体

FCH47N60_13

N-Channel SuperFET MOSFET

文件：353.13 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60_F133

N-Channel SuperFET MOSFET

文件：353.13 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60F

N-Channel SuperFET FRFET MOSFET

文件：290.4 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60F

600V N-Channel MOSFET

文件：978.12 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60F

功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，47 A，73 mΩ，TO-247

ONSEMI

安森美半导体

FCH47N60F_0605

600V N-Channel MOSFET

文件：978.12 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60F_13

N-Channel SuperFET FRFET MOSFET

文件：290.4 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60F_F085

N-Channel MOSFET

文件：388.34 Kbytes Page：6 Pages

Fairchild

仙童半导体

FCH47N60F_F085

600 V、47 A、66 mΩ、TO-247N 沟道 SuperFET™

ONSEMI

安森美半导体

FCH47N60F_F133

Fast Recovery Type ( trr = 240ns)

文件：202.7 Kbytes Page：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

FCH47N60F_F133

N-Channel SuperFET FRFET MOSFET

文件：290.4 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60N

N-Channel MOSFET

文件：334.54 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60N_1112

N-Channel MOSFET

文件：334.54 Kbytes Page：8 Pages

Fairchild

仙童半导体

FCH47N60NF

N-Channel MOSFET, FRFET

文件：301.4 Kbytes Page：8 Pages

Fairchild

仙童半导体

47N60CFD

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according

Infineon

英飞凌

APT47N60BCF

Super Junction FREDFET

文件：402.11 Kbytes Page：5 Pages

ADPOW

APT47N60BCFG

Super Junction FREDFET

文件：402.11 Kbytes Page：5 Pages

ADPOW

APT47N60SCF

Super Junction FREDFET

文件：402.11 Kbytes Page：5 Pages

ADPOW

APT47N60SCFG

Super Junction FREDFET

文件：402.11 Kbytes Page：5 Pages

ADPOW

FCH47N60产品属性

  • 类型

    描述

  • 型号

    FCH47N60

  • 功能描述

    MOSFET 650V SUPER FET

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

FCH47N60供应商更多...

更新时间：2025-11-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
FCH47N60-F133
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市科芯源微电子有限公司
FCH47N60N
FAIRCHILD/仙童
25+
TO247
665
原装正品,假一罚十!
询价
深圳市讯顺达科技有限公司
FCH47N60F-F133
ONSemi
2137
TO-247-3L
2340
全新原装公司现货
询价
深圳市益百分电子有限公司
FCH47N60F-F133
ON
2022+
N/O
6000
全新原装,欢迎询价
询价
中天科工半导体（深圳）有限公司
FCH47N60F-F133
ONSEMI/安森美
25+
TO-247
32360
ONSEMI/安森美全新特价FCH47N60F-F133即刻询购立享优惠#长期有货
询价
深圳市凌旭科技有限公司
FCH47N60F
FAIRCHILD/仙童
21+
TO247
1709
询价
深圳市富达微科技有限公司
FCH47N60F-F133
ON(安森美)
24+
标准封装
8000
原厂原装，价格优势，欢迎洽谈！
询价
深圳市勤思达科技有限公司
FCH47N60F-F133
ON
24+
TO-247
5000
全新原装正品,现货销售
询价
深圳市恒凯威科技开发有限公司
FCH47N60F-F133
ON/安森美
21+
TO-247-3L
8080
只做原装,质量保证
询价
深圳市华康联电子科技有限公司
FCH47N60F-F133
ON
23+
TO-247
20000
询价

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