Silicon Carbide Schottky Rectifier Bridge

Features • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current • ISOPLUS i4-PAC(TM) package

1~ Rectifier Bridges

·Blocking voltages: 800V - 1800V\n·Id(avg): 18A - 174A\n·Package with screw terminals. Space and weight savings\n·Isolation voltage 3000 V~. UL recognized\n·Planar passivated chips. Utilize DCB technology\n·Low forward voltage drop\n·Improved temperature and power cycling;

封装/外壳：ISOPLUSi5-Pak™ 包装：散装 描述：BRIDGE RECT 1P 600V 11A I4-PAC 分立半导体产品 二极管 - 桥式整流器

HiPerDynFRED Epitaxial Diode ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low cathode to tab capacitance (

HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM

HiPerDynFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (

HiPerDynFRED Epitaxial Diode ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low cathode to tab capacitance (