N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC F2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

N-Channel 650 V (D-S) MOSFET

文件：1.08611 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：304.09 Kbytes Page：7 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：280.65 Kbytes Page：7 Pages