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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:F2003;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

F2003

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

丝印代码:F2003T;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003T;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003T;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

丝印代码:F2003T;MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

TI

德州仪器

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

MPD

F2000ERW SERIES

文件:217.73 Kbytes Page:2 Pages

MPD

Compact, 20W Low Cost, 2:1 Input, DC/DC Converters

MPD

丝印代码:A3;Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

PHILIPS

飞利浦

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

MOTOROLA

摩托罗拉

High Current/Voltage Darlington Drivers

文件:194.56 Kbytes Page:6 Pages

NSC

国半

High Current/Voltage Darlington Drivers

文件:194.56 Kbytes Page:6 Pages

NSC

国半

High Current/Voltage Darlington Drivers

文件:194.56 Kbytes Page:6 Pages

NSC

国半

F2003产品属性

  • 类型

    描述

  • Output V:

    12 VDC

  • Output I:

    1

更新时间:2026-7-23 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MAPLESIMI/美浦森
25+
TO-220-2Lead
880000
明嘉莱只做原装正品现货
MORESEMI
22+
SOT-23
20000
只做原装
MAPLESEMI
23+
TO-220-2Lead
50000
原装正品假一罚十,代理渠道价格优
MAXIM/美信
25+
20000
本公司 只做全新原装正品
Maplesemi(美浦森)
25+
TO-220
509
全新原装
MAPLESEMI
25+
TO-220-2Lead
120000
MAPLESEMI全系列供应,支持终端生产
MORESEMI
23+
SOT-23
11392
原厂授权一级代理,专业海外优势订货,价格优势、品种
FGC
三年内
1983
只做原装正品
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MORESEMI
SOT-23
22+
6000
十年配单,只做原装

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