PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

包装：袋 描述：SWITCH CAP 开关 配件 - 帽盖

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time

12.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time

12.0 A Forward Current 70 ns - 3000 ns Recovery Time

Serial 12-Bit, 2.2Msps Sampling ADC with Shutdown

文件：285.08 Kbytes Page：24 Pages

Original Strain Relief Bushings

文件：95.4 Kbytes Page：1 Pages

- 12 GAUGE ALUMINUM BODY PAINTED (RAL 7032)

文件：387.34 Kbytes Page：1 Pages