PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

包装：袋 描述：SWITCH CAP 开关 配件 - 帽盖

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

Integtrated Circuit Electronic Channel Selector

Description The NTE1402 is an integrated circuit in a 24–Lead DIP type package designed for electronic tuner by the preset volume method. Features • Simplifies Selection Circuit up to 16 Channels • Incorporating Clock Oscillator, Input Control, UP–DOWN Counter and Decoder Circuit

Integrated Photosensors

文件：48.77 Kbytes Page：2 Pages