PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Heyco® Liquid Tight Strain Relief Bushings

The Ultimate in Snap-In Strain Relief Protection Snap-in, Low Profile Design allows for Pre-assembled Cables • These low profile co-molded nylon and elastomer parts function as a Liquid Tight Strain Relief with a cable. • cULus approved under UL 514B. • Low profile design: height above pan

Inst, 12 Pr #18 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry 75C Wet

Product Description UL Instrumentation, 12 Pair 18AWG (7x26) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry 75C Wet SUN RES DIR BUR

IEC Appliance Inlet C18 with Fuseholder 1- or 2-pole

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IEC Appliance Inlet C18 with Fuseholder 1- or 2-pole

文件：371.09 Kbytes Page：3 Pages

10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIERS

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