| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
F1002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | POLYFET |   | |
Basic Contact Probes 文件：125.33 Kbytes Page：2 Pages | FEINMETALL | | ||
Basic Contact Probes 文件：125.43 Kbytes Page：2 Pages | FEINMETALL | | ||
Basic Contact Probes 文件：130.24 Kbytes Page：2 Pages | FEINMETALL | | ||
Basic Contact Probes 文件：124.11 Kbytes Page：2 Pages | FEINMETALL | | ||
Basic Contact Probes 文件：124.01 Kbytes Page：2 Pages | FEINMETALL | | ||
FFC/FPC连接器 | XFCN 兴飞 | | ||
FFC/FPC连接器 | XFCN 兴飞 | | ||
FFC/FPC连接器 | XFCN 兴飞 | | ||
SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes) FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde | PANJIT 強茂 | | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested | MOTOROLA 摩托罗拉 | | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested | MOTOROLA 摩托罗拉 | | ||
MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested | MOTOROLA 摩托罗拉 | | ||
Integrated Circuit FM IF TV Amp Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp | NTE | |
F1002产品属性
- 类型
描述
- 触点数量：
4
- 锁定特性：
翻盖式
- 安装类型：
卧贴
- 触点类型：
下接
- 板上高度：
2mm
- 接入柔性电缆厚度：
0.3mm
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POLYFET |
26+ |
100 |
现货供应 |
||||
FAIRCHILD |
23+ |
TO-251 |
24393 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FAIRCHIL |
2447 |
QFN20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-251 |
8400 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
|||
连接器 |
25+ |
Connector |
934 |
就找我吧!--邀您体验愉快问购元件! |
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2019-11-15
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