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F10价格
参考价格：￥46.5365
型号：F10008RS02BE 品牌：C&K 备注：这里有F10多少钱，2025年最近7天走势，今日出价，今日竞价，F10批发/采购报价，F10行情走势销售排行榜，F10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
F10 | Electromagnetic shaker system Keyfeatures TheF10vibrationgeneratorisareaction-typeshakergeneratingverylargedynamicforcesforstructuralexcitationinvibrationresearchandtesting.Thereactionprincipleofoperationandcompactconfigurationallowthisgeneratortobestudmountedinanyposition,directlytos | WILCOXON Amphenol Wilcoxon Sensing Technologies. |  |   |
F10 | 10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL 文件：493.48 Kbytes Page：2 Pages | POWERBOX Powerbox manufactures |  | |
F10 | LEADED (THRU-HOLE): High Voltage Fast Recovery & Short Protection Rectifiers 文件：91.7 Kbytes Page：1 Pages | RFERFE international RFE国际公司RFE国际股份有限公司 |  | |
F10 | SURFACE MOUNT MONOLITHIC CRYSTAL FILTER 文件：27.54 Kbytes Page：1 Pages | RALTRONRaltron Electronics Corporation 拉隆 |  | |
F10 | ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS 文件：622.9 Kbytes Page：6 Pages | XPPOWER XP Power Limited |  | |
F10 | Stackable 文件：360.47 Kbytes Page：3 Pages | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 |  | |
F10 | 1.9mm Round Subminiature Lead LEDs 文件：1.00587 Mbytes Page：10 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 |  | |
F10 | 1.9mm Round Subminiature Lead LED 文件：741.37 Kbytes Page：11 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 | | |
F10 | 1.9mm Round Subminiature Lead LEDs 文件：1.04674 Mbytes Page：11 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 | | |
F10 | 封装/外壳：5-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 10W 电源 - 板安装 直流转换器 | XPP XP Power |  | |
F10 | 封装/外壳：5-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 10W 电源 - 板安装 直流转换器 | XPP XP Power | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI, LaserDriverandothers.PolyfetTMprocessfeaturesgoldmetalforgreatlyextended | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlife | Polyfet Polyfet RF Devices | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | Littelfuselittelfuse 力特力特公司 |  | | |
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRF International Rectifier |  | | |
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS=55V RDS(on)=11mΩ ID=85A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | | | |
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet Polyfet RF Devices | | | |
Compact I/O station for DeviceNet test us-english ■Removable5-pinscrew-clampterminal block,forDeviceNetfieldbusconnection ■RotarycodingswitchforsettingtheDeviceNet™address ■16KanäleDI ■16konfigurierbareKanäle,DIoderDO ■24VDC ■minusschaltend ■Ausgangsstrom:0.5A ■ProtectionclassIP20 | TURCKTurck Inc. 图尔克德国图尔克集团公司 |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | Littelfuselittelfuse 力特力特公司 | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | Littelfuselittelfuse 力特力特公司 | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim | Polyfet Polyfet RF Devices | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
Standard 4-Pin DIP Package Enable Function Features Standard4-PinDIPPackage EnableFunction TypicalApplications Telecommunication UniversalClock | Vectron Vectron International, Inc |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANN PETERMANN-TECHNIK | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | | | |
Hyperfast Recovery Power Rectifier TheFFPF10H60Sishyperfast2rectifier(trr=25ns(Typ.)@IF=10A).ithashalftherecoverytimeofultrafastrectifierandissiliconnitridepassivatedion-implantedepitaxialplanarconstruction. Thisdeviceisintendedforuseasfreewheeling/clampingrectifiersinavarietyofswitchingpower | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | | | |
Super Fast Recovery Rectifiers(600V 10A) SingleSuperFastRecoveryRectifiers | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 |  | | |
Super Fast Recovery Rectifiers(200V 10A) FEATURES ●Lownoise ●trr35ns ●FullyIsolatedMolding ●Dielectricstrength2kVguaranteed APPLICATION ●Switchingpowersupply ●FreeWheel ●HomeAppliances,OfficeEquipment ●Telecommunication,FactoryAutomation | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | | |
F10产品属性
- 类型
描述
- 型号
F10
- 功能描述
Optoelectronic
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIC |
25+ |
SOT23-5 |
12 |
原装正品,假一罚十! |
|||
POLYFET |
24+ |
TO-59 |
199 |
现货供应 |
|||
SEMITEC |
23+ |
MINIMELF |
56000 |
||||
WESTCODE/西码 |
22+ |
MODULE |
4500 |
WESTCODE/西码模块系列在售 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
TOSHIBA |
23+ |
300 |
只做原装全系列供应价格优势 |
||||
Freescale(飞思卡尔) |
24+ |
标准封装 |
12663 |
我们只是原厂的搬运工 |
|||
MTM |
24+ |
QFN26 |
52 |
只做原厂渠道 可追溯货源 |
|||
WESTCODE |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
10 |
公司优势库存 热卖中!! |
F10芯片相关品牌
F10规格书下载地址
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- F08A15
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- F0875NH
- F0875MH
- F0875DH
- F0875BH
- F08471
- F083110-B
- F083110
- F0825NH
- F0825MH
- F0825DH
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2019-11-30F0505S-1W
F0505S-1W，全新原装当天发货或门市自取0755-82732291.
2019-11-15
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