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F10价格
参考价格：￥46.5365
型号：F10008RS02BE 品牌：C&K 备注：这里有F10多少钱，2024年最近7天走势，今日出价，今日竞价，F10批发/采购报价，F10行情走势销售排行榜，F10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
F10 | Electromagnetic shaker system Keyfeatures TheF10vibrationgeneratorisareaction-typeshakergeneratingverylargedynamicforcesforstructuralexcitationinvibrationresearchandtesting.Thereactionprincipleofoperationandcompactconfigurationallowthisgeneratortobestudmountedinanyposition,directlytos | WILCOXON Amphenol Wilcoxon Sensing Technologies. |  |   |
F10 | 10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL 文件：493.48 Kbytes Page：2 Pages | POWERBOX Powerbox manufactures |  | |
F10 | LEADED (THRU-HOLE): High Voltage Fast Recovery & Short Protection Rectifiers 文件：91.7 Kbytes Page：1 Pages | RFERFE international RFE国际公司RFE国际股份有限公司 |  | |
F10 | SURFACE MOUNT MONOLITHIC CRYSTAL FILTER 文件：27.54 Kbytes Page：1 Pages | RALTRONRaltron Electronics Corporation 拉隆 |  | |
F10 | ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS 文件：622.9 Kbytes Page：6 Pages | XPPOWER XP Power Limited |  | |
F10 | Stackable 文件：360.47 Kbytes Page：3 Pages | OHMITE OHMITE MANUFACTURING COMPANY |  | |
F10 | 1.9mm Round Subminiature Lead LEDs 文件：1.00587 Mbytes Page：10 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 |  | |
F10 | 1.9mm Round Subminiature Lead LED 文件：741.37 Kbytes Page：11 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 | | |
F10 | 1.9mm Round Subminiature Lead LEDs 文件：1.04674 Mbytes Page：11 Pages | TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD. 至恩科技香港至恩科技有限公司 | | |
F10 | 封装/外壳：5-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 10W 电源 - 板安装 直流转换器 | XPPXPPower XP Power |  | |
F10 | 封装/外壳：5-DIP 模块 包装：管件 描述：DC DC CONVERTER 1000V 10W 电源 - 板安装 直流转换器 | XPPXPPower XP Power | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI, LaserDriverandothers.PolyfetTMprocessfeaturesgoldmetalforgreatlyextended | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlife | Polyfet POLYFET | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | | |
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS=55V RDS(on)=11mΩ ID=85A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | LittelfuseLittelfuse Inc. 力特力特公司 | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim | Polyfet POLYFET | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
Standard 4-Pin DIP Package Enable Function Features Standard4-PinDIPPackage EnableFunction TypicalApplications Telecommunication UniversalClock | Vectron VECTRON |  | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
HIGH RELIABILITY FOR LOW COST FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR | PETERMANNPETERMANN-TECHNIK PETERMANN-TECHNIK | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet POLYFET | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITE OHMITE MANUFACTURING COMPANY | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITE OHMITE MANUFACTURING COMPANY | | | |
Hyperfast Recovery Power Rectifier TheFFPF10H60Sishyperfast2rectifier(trr=25ns(Typ.)@IF=10A).ithashalftherecoverytimeofultrafastrectifierandissiliconnitridepassivatedion-implantedepitaxialplanarconstruction. Thisdeviceisintendedforuseasfreewheeling/clampingrectifiersinavarietyofswitchingpower | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITE OHMITE MANUFACTURING COMPANY | | | |
Thin Stackohm Vitreous Enamel Power ‘Thin’Stackohm®VitreousEnamelPower Whenlimitedspaceisaconsideration,chooseOhmite’s“thin”stackable250Typeresistors.Theseoval-shapedceramic-coreresistorsfeaturealowprofiletopermitinstallationinspaceswithheightrestrictions.Theyarealsoequippedwithintegralmountin | OHMITE OHMITE MANUFACTURING COMPANY | | | |
Super Fast Recovery Rectifiers(600V 10A) SingleSuperFastRecoveryRectifiers | SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元（上海）电器有限公司 |  | | |
Super Fast Recovery Rectifiers(200V 10A) FEATURES ●Lownoise ●trr35ns ●FullyIsolatedMolding ●Dielectricstrength2kVguaranteed APPLICATION ●Switchingpowersupply ●FreeWheel ●HomeAppliances,OfficeEquipment ●Telecommunication,FactoryAutomation | SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元（上海）电器有限公司 | | | |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
F10产品属性
- 类型
描述
- 型号
F10
- 功能描述
Optoelectronic
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WESTCODE |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
C&K |
23+ |
6000 |
|||||
TAKENAKA |
2306+ |
DIP |
15400 |
优势代理渠道,原装现货,可全系列订货 |
|||
CFEON |
24+ |
SMD |
156821 |
明嘉莱只做原装正品现货 |
|||
POLYFET |
21+ |
VQFN |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
PhaseLink |
23+ |
SOP-8 |
24376 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ALLWINNER/全志 |
2048+ |
QFP |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
10 |
公司优势库存 热卖中!! |
||||||
NXP(恩智浦) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Freescale(飞思卡尔) |
23+ |
标准封装 |
12663 |
我们只是原厂的搬运工 |
F10芯片相关品牌
F10规格书下载地址
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- F0875MH
- F0875DH
- F0875BH
- F08471
- F083110-B
- F083110
- F0825NH
- F0825MH
- F0825DH
F10数据表相关新闻
EZJZSV120JA 是一种压敏电阻
EZJZSV120JA原装正品现货供应
2024-3-20F1C100A
QFP128
2020-10-28F1892SD1200
F1892SD1200?,当天发货0755-82732291全新原装现货或门市自取.
2020-7-28F16E27PJAR22，F21572PZ，F255500PG-Q，FMXALPPDIP1，GC1011A，GC1012B-PQ，GC2011A-PB，GC2011A-PQ，GC3011A-PQ，GC3011-PQ，GC3021A-PQ
F16E27PJAR22，F21572PZ，F255500PG-Q，FMXALPPDIP1，GC1011A，GC1012B-PQ，GC2011A-PB，GC2011A-PQ，GC3011A-PQ，GC3011-PQ，GC3021A-PQ
2019-12-12EZ430-CHRONOS-868，高效配单，快速交货，兴中扬电子科技
EZ430-CHRONOS-868，高效配单，快速交货，兴中扬电子科技
2019-11-30F0505S-1W
F0505S-1W，全新原装当天发货或门市自取0755-82732291.
2019-11-15
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