DESCRIPTION

STN4438 is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

FEATURE

60V/8.2A, RDS(ON)= 35mΩ (Typ.)

@VGS = 10V

60V/7.6A, RDS(ON)= 45mΩ

@VGS = 4.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design