Description

The EL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector.

They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features:

• AC input response

• Current transfer ratio

(CTR: Min. 20 at IF=±1mA ,VCE=5V)

• High isolation voltage between input

and output (Viso=5000 V rms )

• Wide Operating temperature range -55~110ºC

• High collector-emitter voltage VCEO=80V

• Compact dual-in-line package